2019.09.30 Electronic structure of interstitial hydrogen in In-Ga-Zn-O
semiconductor simulated by muon
Paper: Applied Physics Letters Volume 115, Issue 12, 122104 [Editor's
pick]
Title: Electronic structure
of interstitial hydrogen in In-Ga-Zn-O semiconductor simulated by muon
Author: K. M. Kojima, M. Hiraishi, H. Okabe, A. Koda, R. Kadono, K.
Ide, S. Matsuishi, H. Kumomi, T. Kamiya, and H. Hosono
DOI:
10.1063/1.5117771
