High‐Mobility p‐Type and n‐Type Copper Nitride Semiconductors by Direct Nitriding Synthesis and In Silico Doping Design| Topics | Tokyo Institute of Technology

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2018.06.22 High‐Mobility p‐Type and n‐Type Copper Nitride Semiconductors by Direct Nitriding Synthesis and In Silico Doping Design

2018.06.22 High‐Mobility p‐Type and n‐Type Copper Nitride Semiconductors by Direct Nitriding Synthesis and In Silico Doping Design

Paper : Advanced Materials
Title : High-Mobility p-Type and n-Type Copper Nitride Semiconductors by Direct Nitriding Synthesis and In Silico Doping Design
Author : Kosuke Matsuzaki^*, Kou Harada, Yu Kumagai, Shogo Koshiya, Koji Kimoto, Shigenori Ueda, Masato Sasase, Akihiro Maeda, Tomofumi Susaki, Masaaki Kitano, Fumiyasu Oba^* and Hideo Hosono
DOI :10.1002/adma.201801968